M13S2561616A Datasheet, PDF(4/48 Page) Elite Semiconductor Memory Technology Inc. – 4M x 16 Bit x 4 Banks Double Data Rate SDRAM

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M13S2561616A Datasheet, PDF (4/48 Pages) Elite Semiconductor Memory Technology Inc. – 4M x 16 Bit x 4 Banks Double Data Rate SDRAM

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ESMT

Pin Description

Pin Name

A0~A12,

BA0,BA1

DQ0~DQ15

RAS

CAS

VSS

VDD

LDQS, UDQS

Function

Address inputs

- Row address A0~A12

- Column address A0~A8

A10/AP : AUTO Precharge

BA0, BA1 : Bank selects (4 Banks)

Data-in/Data-out

Row address strobe

Column address strobe

Write enable

Ground

Power

Bi-directional Data Strobe. LDQS

corresponds to the data on DQ0~DQ7;

UDQS correspond to the data on

DQ8~DQ15.

M13S2561616A

Pin Name

Function

LDM, UDM

DM is an input mask signal for write

data. LDM corresponds to the data

on DQ0~DQ7; UDM correspond to

the data on DQ8~DQ15.

CLK, CLK

CKE

VDDQ

VSSQ

VREF

Clock input

Clock enable

Chip select

Supply Voltage for GDQ

Ground for DQ

Reference Voltage for SSTL-2

No connection

Elite Semiconductor Memory Technology Inc.

Publication Date : Jul. 2007

Revision : 1.3

4/48

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