M13S2561616A Datasheet, PDF(37/48 Page) Elite Semiconductor Memory Technology Inc. – 4M x 16 Bit x 4 Banks Double Data Rate SDRAM

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

M13S2561616A Datasheet, PDF (37/48 Pages) Elite Semiconductor Memory Technology Inc. – 4M x 16 Bit x 4 Banks Double Data Rate SDRAM

◁

ESMT

Write with Auto Precharge (@BL=8)

M13S2561616A

Note 1.

The row active command of the precharge bank can be issued after tRP from this point.

The new read/write command of another activated bank can be issued from this point.

At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.

Elite Semiconductor Memory Technology Inc.

Publication Date : Jul. 2007

Revision : 1.3

37/48

▷