M12L32321A Datasheet, PDF (4/28 Pages) Elite Semiconductor Memory Technology Inc. – 512K x 32Bit x 2Banks Synchronous DRAM

ESMT
M12L32321A
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70 °C VIH(min)/VIL(max)=2.0V/0.8V)
Parameter
Symbol
Test Condition
CAS
Version
Latency _-5.5
-6
-7
Operating Current
(One Bank Active)
ICC1
Burst Length = 1
tRC ≥ tRC (min), tCC ≥ tCC (min), IOL= 0mA
160
140
120
Precharge Standby
ICC2P
CKE ≤ VIL(max), tCC =15ns
2
Current in power-down
mode
ICC2PS CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞
2
Precharge Standby
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC =15ns
25
Current in non
Input signals are changed one time during 30ns
power-down mode
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
15
Active Standby Current ^ICC3P
CKE ≤ VIL(max), tCC =15ns
10
in power-down mode
ICC3PS CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞
10
Active Standby Current ICC3N
in non power-down
CKE ≥ VIH(min), CS ≥ VIH(min), tCC=15ns
Input signals are changed one time during 2clks
25
mode
All other pins ≥ VDD-0.2V or ≤ 0.2V
(One Bank Active)
ICC3NS
CKE ≥ VIH (min), CLK ≤ VIL(max), tCC= ∞
Input signals are stable
15
Operating Current
(Burst Mode)
IOL= 0Ma, Page Burst
ICC4
All Band Activated, tCCD = tCCD (min)
3
160
140
120
2
160
140
120
Refresh Current
ICC5
tRC ≥ tRC(min)
160
140
120
Self Refresh Current
ICC6
CKE ≤ 0.2V
1
Note: 1.Measured with outputs open. Addresses are changed only one time during tCC(min).
2.Refresh period is 64ms. Addresses are changed only one time during tCC(min).
Unit Note
mA 1
mA -
mA -
mA _-
mA ^-
mA -
mA
-
mA _-
mA 1
mA 1
mA 2
mA -
Elite Semiconductor Memory Technology Inc.
Publication Date : Oct. 2008
Revision : 1.1
4/28