M12L32321A-2G Datasheet, PDF (4/28 Pages) Elite Semiconductor Memory Technology Inc. – JEDEC standard 3.3V ± 0.3V power supply

ESMT
M12L32321A (2G)
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted)
Parameter
Symbol
Test Condition
Version
-5
-6
-7
Operating Current
(One Bank Active)
ICC1
Burst Length = 1
tRC  tRC (min), tCC  tCC (min), IOL= 0mA
110
100
90
Precharge Standby
ICC2P
CKE  VIL(max), tCC =15ns
2
Current in power-down
mode
ICC2PS CKE  VIL(max), CLK  VIL(max), tCC = 
2
Precharge Standby
Current in non
ICC2N
CKE  VIH(min), CS  VIH(min), tCC =15ns
Input signals are changed one time during 30ns
25
power-down mode
ICC2NS
CKE  VIH(min), CLK  VIL(max), tCC = 
Input signals are stable
10
Active Standby Current ^ICC3P
CKE  VIL(max), tCC =15ns
10
in power-down mode
ICC3PS CKE  VIL(max), CLK  VIL(max), tCC = 
10
CKE  VIH(min), CS  VIH(min), tCC=15ns
Active Standby Current _ICC3N
Input signals are changed one time during 2clks
35
in non power-down
mode
All other pins  VDD-0.2V or  0.2V
(One Bank Active)
ICC3NS
CKE  VIH (min), CLK  VIL(max), tCC= 
Input signals are stable
15
Operating Current
(Burst Mode)
IOL= 0mA, Page Burst
ICC4
All Band Activated, tCCD = tCCD (min)
140
130
120
Refresh Current
ICC5
tRFC  tRFC(min)
210
200
190
Self Refresh Current
ICC6
CKE  0.2V
2
Note: 1.Measured with outputs open. Addresses are changed only one time during tCC(min).
2.Refresh period is 64ms. Addresses are changed only one time during tCC(min).
Unit Note
mA 1
mA -
mA -
mA -
mA -
mA -
mA -
mA -
mA 1
mA 2
mA -
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2012
Revision : 1.0
4/28