M13S64164A Datasheet, PDF (37/49 Pages) Elite Semiconductor Memory Technology Inc. – 1M x 16 Bit x 4 Banks Double Data Rate SDRAM

ESMT
Preliminary
Write with Auto Precharge (@BL=8)
M13S64164A
Note 1.
The row active command of the precharge bank can be issued after t_RP from this point.
The new read/write command of another activated bank can be issued from this point.
At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2007
Revision : 0.3
37/49