M53D2561616A-2F Datasheet, PDF (31/47 Pages) Elite Semiconductor Memory Technology Inc. – Bi-directional data strobe (DQS)

ESMT
M53D2561616A (2F)
Multi Bank Interleaving READ (@BL=4, CL=3)
0
1
CLK
CLK
CKE
2
3
4
5
6
7
8
9
10
11
12
13
HIGH
CS
RAS
CAS
BA0, BA1
BAa
BAb
BAa
BAb
A10/AP
Ra
Rb
ADDR
(A0~An)
WE
DQS
DQs
DM
COMMAND
Ra
Rb
Ca
Cb
tRRD
Hi-Z
Hi-Z
ACTIVE
tRCD
ACTIVE
tCCD
Qa0 Qa1 Qa2 Qa3 Qb0 Qb1 Qb2 Qb3
READ
READ
10122B32R.B
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2014
Revision : 1.1
31/47