M53D2561616A-2F Datasheet, PDF (24/47 Pages) Elite Semiconductor Memory Technology Inc. – Bi-directional data strobe (DQS)

ESMT
M53D2561616A (2F)
Read with Auto Precharge
If a read with auto precharge command is initiated, the Mobile DDR SDRAM automatically enters the precharge operation BL/2
clock later from a read with auto precharge command when t_RAS(min) is satisfied. If not, the start point of precharge operation will
be delayed until t_RAS(min) is satisfied. Once the precharge operation has started the bank cannot be reactivated and the new
command can not be asserted until the precharge time (t_RP) has been satisfied
<Burst Length = 4, CAS Latency = 3>
0
1
CLK
CLK
2
3
4
COMMAND
Bank A
ACTIVE
NOP
NOP
NOP
Read A
Aut o Precharge
DQS
Hi-Z
5
NOP
6
NOP
7
8
NOP
tRP
NOP
9
10
NOP
NOP
Bank can be reactivated at
completion of tRP ¹⁾
DQ's
Hi-Z
tRAS(min)
Dout 0 Dout 1 Dout 2 Dout 3
Auto-Precharge starts
Note: The row active command of the precharge bank can be issued after t_RP from this point.
Asserted
Command
READ
READ + AP¹
Active
Precharge
For Same Bank
5
6
READ + No AP
Illegal
READ + AP
Illegal
Illegal
Illegal
Legal
Legal
Note: 1. AP = Auto Precharge
7
Illegal
Illegal
Illegal
Illegal
5
Legal
Legal
Legal
Legal
For Different Bank
6
Legal
Legal
Legal
Legal
7
Legal
Legal
Legal
Legal
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2014
Revision : 1.1
24/47