M53D128168A-2E Datasheet, PDF (3/47 Pages) Elite Semiconductor Memory Technology Inc. – Internal pipelined double-data-rate architecture, two data

ESMT
M53D128168A (2E)
Operation Temperature Condition -40°C~85°C
Absolute Maximum Rating
Parameter
Voltage on any pin relative to V_SS
Voltage on V_DD supply relative to V_SS
Voltage on V_DDQ supply relative to V_SS
Operating ambient temperature
Storage temperature
Power dissipation
Short circuit current
Symbol
V_IN, V_OUT
V_DD
V_DDQ
T_A
T_STG
P_D
I_OS
Value
-0.5 ~ 2.7
-0.5 ~ 2.7
-0.5 ~ 2.7
-40 ~ +85
-55 ~ +150
1.0
50
Unit
V
V
V
°C
°C
W
mA
Note:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC Operation Condition & Specifications
DC Operation Condition
Recommended operating conditions (Voltage reference to V_SS = 0V)
Parameter
Symbol
Supply voltage
I/O Supply voltage
Input logic high voltage (for Address and Command)
Input logic low voltage (for Address and Command)
Input logic high voltage (for DQ, DM, DQS)
Input logic low voltage (for DQ, DM, DQS)
Output logic high voltage
Output logic low voltage
Input Voltage Level, CLK and CLK inputs
V_DD
V_DDQ
V_IH (DC)
V_IL (DC)
V_IHD (DC)
V_ILD (DC)
V_OH (DC)
V_OL (DC)
V_IN (DC)
Input Differential Voltage, CLK and CLK inputs
Input leakage current
Output leakage current
V_ID (DC)
I_I
I_OZ
Min
1.7
1.7
0.8 x V_DDQ
-0.3
0.7 x V_DDQ
-0.3
0.9 x V_DDQ
-
-0.3
0.4 x V_DDQ
-2
-5
Max
1.95
1.95
V_DDQ + 0.3
0.2 x V_DDQ
V_DDQ + 0.3
0.3 x V_DDQ
-
0.1 x V_DDQ
V_DDQ + 0.3
V_DDQ + 0.6
2
5
Note:
1. V_ID is the magnitude of the difference between the input level on CLK and the input level on CLK .
Unit
V
V
V
V
V
V
V
V
V
V
μA
μA
Note
I_OH = -0.1mA
I_OL = 0.1mA
1
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2012
Revision : 1.0
3/47