M11B416256A Datasheet, PDF (3/15 Pages) Elite Semiconductor Memory Technology Inc. – 256 K x 16 DRAM EDO PAGE MODE

EliteMT
M11B416256A
ABSOLUTE MAXIMUM RATINGS
Voltage on Any pin Relative to Vss … ……-1V to +7V
Operating Temperature, TA (ambient) ….0 °C to +70 °C
Storage Temperature (plastic) ……….-55 °C to +150 °C
Power Dissipation …………………………………1.43W
Short Circuit Output Current ……………………50mA
Permanent device damage may occur if “Absolute
Maximum Ratings” are exceeded. This is a stress rating
only, and functional operation of the device above those
conditions indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED
OPERATING CONDITIONS (0 °C ≤ TA ≤ 70 °C ; VCC = 5V ± 10% unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL MIN MAX UNITS NOTES
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
0V ≤ VIN ≤ VIH (max)
0V ≤ VOUT ≤ VCC
Output(s) disable
IOH = -5 mA
IOL = 4.2 mA
VCC
4.5
5.5
V
1
VSS
0
0
V
VIH
2.4 VCC +0.3 V
1
VIL
-0.3
0.8
V
1
ILI
-10
10
µA
ILO
-10
10
µA
VOH
2.4
-
V
VOL
-
0.4
V
Note : 1.All Voltages referenced to VSS
PARAMETER
Operating Current
CONDITIONS
RAS , CAS cycling , tRC =min
SYMBOL
MAX
UNITS NOTES
-25 -28 -30 -35 -40
ICC1 210 190 170 150 135 mA 1,2
Standby Current
TTL interface , RAS , CAS = VIH ,
DOUT =High-Z
4 4 4 4 4 mA
ICC2
CMOS interface, RAS , CAS ≥ VCC-0.2V
2 2 2 2 2 ^mA
RAS only refresh Current tRC = min
ICC3 ^{210 190 170 150 135 mA}
2
EDO Page Mode Current tPC = min
ICC4 210 190 170 150 135 mA 1,3
Standby Current
RAS =VIH, CAS = VIL
ICC5
5 5 5 5 5 mA
1
CAS Before RAS
Refresh
Current
tRC = min
ICC6 ^{210 190 170 150 135 mA}
Note : 1. ICC max is specified at the output open condition.
2. Address can be changed twice or less while RAS =VIL .
3. Address can be changed once or less while CAS =VIH .
Elite Memory Technology Inc
Publication Date : Feb. 2004
Revision : 1.9
3/15