M11B416256A Datasheet, PDF (10/15 Pages) Elite Semiconductor Memory Technology Inc. – 256 K x 16 DRAM EDO PAGE MODE

EliteMT
M11B416256A
RAS
VIH
VIL
VIH
CASL,CASH _VIL
ADDR ^VIH
VIL
WE
VIH
VIL
I/O
VIH
VIL
VIH
OE _VIL
EDO-PAGE-MODE EARLY-WRITE CYCLE
tRASC
tCRP
tCSH
tRCD
tCAS,tCLCH
tPC (NOTE1)
tCP
tCAS,tCLCH
tCP
tRSH
tCAS,tCLCH
tASR
tRAD
tRAH
tAR
tASC
tCAH
ROW
COLUMN
tWCS
tCWL
tWCH
tWP
tASC tCAH
COLUMN
tWCS
tCWL
tWCH
tWP
tASC
tRAL
tCAH
COLUMN
tWCS
tCWL
tWCH
tWP
tWCR
tDHR
tDS
tDH
VALID DATA
tDS
tDH
VALID DATA
tRWL
tDS
tDH
VALID DATA
tRP
tCP
ROW
RAS
VIH
VIL
VIH
CASL,CASH VIL
VIH
ADDR _VIL
VIH
WE _VIL
VI/O H
I/O _{VI/O L}
VIH
OE _VIL
EDO-PAGE-MODE READ-WRITE CYCLE
(LATE WRITE and READ-MODIFY-WRITE CYCLES)
tRASC
tRP
tCRP
tRCD
tCSH
tCAS,tCLCH
tCP
tPCM
tCAS,tCLCH
tCP
tRSH
tCAS,tCLCH
tCP
tASR
tAR
tRAD
tRAH
ROW
tASC
tCAH
COLUMN
tRCS
tRWD
tCWL
tWP
tAWD
tCWD
tASC tCAH
COLUMN
tCWL
tWP
tAWD
tCWD
tASC
tRAL
tCAH
COLUMN
tAWD
tCWD
ROW
tRWL
tCWL
tWP
tRAC
tAA
tCAC
tCLZ
tO AC
tDH
tDS
tAA
tACP
tCAC
tCLZ
VALID VALID
DOUT
DIN
tOFF2
tO AC
tDH
tDS
tAA
tACP
tCAC
tCLZ
VALID VALID
DOUT
D IN
tOFF2
tO AC
tDH
tDS
VALID VALID
DOUT
DIN
tOFF2
tOEH
DON'T CARE
UNDEFINED
Note : 1. tPC can be measured from falling edge to falling edge of CAS , or from rising edge to rising edge of CAS . Both
measurements must meet the tPC specification.
Elite Memory Technology Inc
Publication Date : Feb. 2004
Revision : 1.9
10/15