F49B002UA Datasheet, PDF (12/33 Pages) Elite Semiconductor Memory Technology Inc. – 2 Mbit (256K x 8) 5V Only CMOS Flash Memory

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F49B002UA
9. OPERATING RANGES
Commercial (C) Devices Ambient Temperature (TA) . . . . . . . . . . . 0°C to +70°C
V_CC Supply Voltages V_CC for all devices . . . . . . . . . . . . . . . . . . . . .4.5 V to 5.5 V
Operating ranges define those limits between which the functionality of the device is guaranteed.
Symbol
C_IN1
C_IN2
C_OUT
Description
Input Capacitance
Control Pin
Capacitance
Output Capacitance
Table 7. Capacitance T_A = 25°C , f = 1.0 MHz
Conditions
V_IN = 0V
V_IN = 0V
Min.
V_OUT = 0V
Typ. Max. Unit
6
pF
12
pF
12
pF
10. DC CHARACTERISTICS
Table 8. DC Characteristics T_A = 0C to 70C, V_CC = 4.5V to 5.5V
Symbol
Description
I_LI
Input Leakage Current
I_LO Output Leakage Current
I_CC1 V_CC Active Read Current
I_CC2 V_CC Active Write Current
I_CC3 CMOS Standby Current
I_CC4
TTL Standby Current
V_IL Input Low Voltage(Note 1)
V_IH
Input High Voltage
Voltage for Auto-Select
V_ID
and Temporary Sector
Unprotect
V_OL
Output Low Voltage
V_OH1 Output High Voltage(TTL)
V_LKO Low V_CC Lock-out Voltage
Conditions
V_IN = V_SS or V_CC, V_CC = V_CC max.
V_OUT = V_SS or V_CC, V_CC = V_CC max
CE^{= V}IL^, OE ^{= V}IH, ^{f = 5MHz}
CE ^{= V}IL ^± OE ^{= V}IH
CE ^{= V}CC ^{± 0.3V}
CE ^{= V}IH
-
-
V_CC =5.0V
I_OL = 2.1mA
I_OH = 0.4mA
-
Min.
-
-
-
-
-
-
-0.3
2.0
11.5
-
2.4
3.2
Typ. Max. Unit
-
10
uA
-
10
uA
-
25
mA
15
30
mA
25
50
uA
0.2
5
mA
-
0.8
V
- VDD + 0.5 V
-
12.5
V
-
0.45
V
-
-
V
-
-
V
Elite Flash Storage Technology Inc.
Publication Date : Sep. 2006
Revision: 1.4
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