F59D4G81A Datasheet, PDF (10/54 Pages) Elite Semiconductor Memory Technology Inc. – Voltage Supply: 1.8V (1.7V ~ 1.95V)

ESMT
F59D4G81A / F59D4G161A
AC Characteristics for Operation
Parameter
Data Transfer from Cell to Register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Symbol
t_R
t_AR
t_CLR
t_RR
t_RP
t_WB
Min.
-
10
10
20
25
-
Max.
25
-
-
-
-
100
WP Low to WE Low (disable mode)
t_WW
100
-
WP High to WE Low (enable mode)
Read Cycle Time
t_RC
45
-
RE Access Time
t_REA
-
30
CE Access Time
t_CEA
-
45
RE High to Output Hi-Z
t_RHZ
-
100
CE High to Output Hi-Z
t_CHZ
-
30
CE High to ALE or CLE Don’t Care
t_CSD
0
-
RE High to Output Hold
t_RHOH
15
-
RE Low to Output Hold
t_RLOH
5
-
CE High to Output Hold
t_COH
15
-
RE High Hold Time
t_REH
15
-
Output Hi-Z to RE Low
t_IR
0
-
RE High to WE Low
t_RHW
100
-
WE High to RE Low
t_WHR
60
-
Read
-
5
Device Resetting
Time during ...
Program
Erase
t_RST
-
-
10
500
Ready
-
5⁽¹⁾
Cache Busy in Read Cache (following
31h and 3Fh)
t_DCBSYR
-
30
NOTE: 1. If reset command (FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Unit
us
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
us
us
us
us
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
Revision: 1.4
10/54