F25L32QA Datasheet, PDF (1/42 Pages) Elite Semiconductor Memory Technology Inc. – 3V Only 32 Mbit Serial Flash Memory with Dual and Quad

ESMT
Flash
(Preliminary)
F25L32QA
3V Only 32 Mbit Serial Flash Memory
with Dual and Quad
„ FEATURES
y Single supply voltage 2.7~3.6V
y Standard, Dual and Quad SPI
y Speed
- Read max frequency: 33MHz
- Fast Read max frequency: 50MHz / 86MHz/ 100MHz
- Fast Read Dual/Quad max frequency: 50MHz / 100MHz
(100MHz / 172MHz/ 200MHz equivalent Dual SPI;
200MHz / 344MHz/ 400MHz equivalent Quad SPI)
y Low power consumption
- Active current: 35 mA
- Standby current: 30 μ A
- Deep Power Down current: 5 μ A
y Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
y Program
- Byte programming time: 7 μ s (typical)
- Page programming time: 1.5 ms (typical)
y Erase
- Chip erase time 25 sec (typical)
- Block erase time 1 sec (typical)
- Sector erase time 90 ms (typical)
y Page Programming
- 256 byte per programmable page
y Auto Address Increment (AAI) WORD Programming
- Decrease total chip programming time over Byte Program
operations
y Lockable 2K bytes OTP security sector
y SPI Serial Interface
- SPI Compatible: Mode 0 and Mode 3
y End of program or erase detection
y Write Protect ( WP )
y Hold Pin ( HOLD )
y All Pb-free products are RoHS-Compliant
„ ORDERING INFORMATION
Product ID
F25L32QA –50PAG
F25L32QA –86PAG
F25L32QA –100PAG
F25L32QA –50PHG
F25L32QA –86PHG
F25L32QA –100PHG
Speed
Package
Comments
50MHz 8 lead SOIC 200mil
Pb-free
86MHz 8 lead SOIC 200mil
Pb-free
100MHz 8 lead SOIC 200mil
Pb-free
50MHz 16 lead SOIC 300mil
Pb-free
86MHz 16 lead SOIC 300mil
Pb-free
100MHz 16 lead SOIC 300mil
Pb-free
„ GENERAL DESCRIPTION
The F25L32QA is a 32Megabit, 3V only CMOS Serial Flash
memory device. The device supports the standard Serial
Peripheral Interface (SPI), and a Dual/Quad SPI. ESMT’s
memory devices reliably store memory data even after 100,000
programming and erase cycles.
The memory array can be organized into 16,384 programmable
pages of 256 byte each. 1 to 256 byte can be programmed at a
time with the Page Program instruction. The device also can be
programmed to decrease total chip programming time with Auto
Address Increment (AAI) programming.
Elite Semiconductor Memory Technology Inc.
The device features sector erase architecture. The memory array
is divided into 1024 uniform sectors with 4K byte each; 64
uniform blocks with 64K byte each. Sectors can be erased
individually without affecting the data in other sectors. Blocks can
be erased individually without affecting the data in other blocks.
Whole chip erase capabilities provide the flexibility to revise the
data in the device. The device has Sector, Block or Chip Erase
but no page erase.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
Publication Date: Jan. 2009
Revision: 0.2
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