PTF10100 Datasheet, PDF (4/6 Pages) Ericsson – 165 Watts, 860-900 MHz LDMOS Field Effect Transistor

PTF 10100
Impedance Data
V_DD = 28 V, I_DQ = 1.8 A Total, P_OUT = 165 W
e
Frequency
MHz
860
870
880
890
900
Z Source
G
G
D ^{Z Load}
S
D
Z Source W
R
jX
2.3
1.6
1.9
0.8
1.8
0.3
1.7
0.1
1.6
-0.2
Z Load W
R
jX
1.60
-1.1
1.70
-1.7
1.90
-2.1
1.95
-1.8
1.80
-1.5
Z₀ = 50 W
Z Source
860 MHz
900 MHz
860 MHz
900 MHz
Z Load
0.1
Typical Scattering Parameters
(V_DS = 28 V, I_D = 2 A per side)
f
S11
(MHz)
Mag
Ang
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
0.980
-178
0.982
-179
0.983
-180
0.989
179
0.989
179
0.987
179
0.983
178
0.982
177
0.980
176
0.972
175
0.958
174
0.929
171
0.858
168
0.693
173
0.783
-170
0.918
-172
0.951
-175
0.974
-177
0.988
-178
0.984
-179
0.979
-180
0.980
180
0.992
180
0.991
179
0.986
178
Mag
0.996
0.773
0.641
0.545
0.489
0.449
0.425
0.414
0.405
0.419
0.442
0.509
0.662
0.882
0.714
0.423
0.261
0.184
0.124
0.060
0.048
0.070
0.058
0.049
0.042
S21
Ang
15.6
12.8
9.48
7.19
5.48
2.11
-0.90
-4.52
-10.2
-14.3
-19.9
-27.5
-42.4
-75.9
-125
-153
-167
-179
165
158
-154
179
166
156
149
4
S12
Mag
0.010
0.008
0.006
0.005
0.003
0.002
0.002
0.001
0.001
0.001
0.001
0.005
0.013
0.030
0.028
0.022
0.020
0.019
0.018
0.017
0.018
0.018
0.018
0.019
0.021
Ang
-85.2
-85.3
-85.7
-85.3
-93.7
-74.5
-64.9
-68.5
-55.1
-88.5
-87.2
-105
-133
174
120
101
89.2
81.8
77.9
76.7
77.4
73.9
74.5
78.7
79.7
S22
Mag
Ang
0.994
-177
0.993
-177
0.992
-178
0.996
-179
0.999
-179
0.995
-179
0.996
-179
0.998
-180
0.997
-180
0.997
180
0.993
180
0.991
179
0.989
179
0.987
179
0.993
179
0.989
179
0.982
179
0.982
178
0.990
178
0.990
178
0.986
178
0.983
178
0.990
177
0.992
178
0.984
178