PTF10100 Datasheet, PDF (1/6 Pages) Ericsson – 165 Watts, 860-900 MHz LDMOS Field Effect Transistor

e
PTF 10100
165 Watts, 860–900 MHz
LDMOS Field Effect Transistor
Description
The 10100 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for large signal amplifier
applications from 860 to 900 MHz. It is rated at 165 watts power output.
Nitride surface passivation and gold metallization ensure excellent
device lifetime and reliability.
• INTERNALLY MATCHED
• Performance at 894 MHz, 28 Volts
- Output Power = 165 Watts
- Power Gain = 13.0 dB Typ
- Drain Efficiency = 50% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• 100% lot traceability
Typical Output Power & Efficiency vs. Input Power
180
60
Efficiency
140
45
100
60
20
0
30
V_DD = 28.0 V
I_DQ = 1.8 A Total ₁₅
f = 880 MHz
Output Power
0
1 23 456 78
Input Power (Watts)
Maximum Ratings
Parameter
Drain-Source Voltage ⁽¹⁾
Gate-Source Voltage ⁽¹⁾
Operating Junction Temperature
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
(1) _{per side}
10100 _A-1234569917
Package 20250
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
500
2.85
–40 to +150
0.35
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
1