PTF10100 Datasheet, PDF (2/6 Pages) Ericsson – 165 Watts, 860-900 MHz LDMOS Field Effect Transistor

PTF 10100
Electrical Characteristics (per side) (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 5 mA
Drain-Source Leakage Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 3 A
RF Specifications (100% Tested)
Characteristic
Gain
(V_DD = 28 V, P_OUT = 165 W, I_DQ = 1.8 A Total, f = 894 MHz)
Power Output at 1 dB Compression
(V_DD = 28 V, I_CQ = 1.8 A Total, f = 880 MHz)
Drain Efficiency
(V_DD = 28 V, P_OUT = 165 W, I_DQ = 1.8 A Total, f = 894 MHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 165 W(PEP), I_DQ = 1.8 A Total,
f = 893.9, 894 MHz—all phase angles at frequency of test)
Typical Performance
Typical POUT (at P-1dB), Gain vs. Frequency
18
225
Output Power (W )
16
175
V_DD = 28 V
14
I_DQ = 1.8 A Total
125
Gain (dB)
12
75
10
865
Efficiency (%)
25
870 875 880 885 890 895
Frequency (MHz)
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
—
—
Typ Max Units
—
—
Volts
—
1.0
mA
4.3
—
Volts
2.5
—
Siemens
Symbol Min
G_ps
12.0
P-1dB
165
h
45
Y
—
Typ Max Units
13.0
—
dB
180
—
Watts
50
—
%
—
10:1
—
Broadband Test Fixture Performance
16
60
14
Gain
Efficiency (%)
50
40
12
10
8
865
V_DD = 28 V
I_DQ = 1.8 A Total
P_OUT = 165 W
870 875 880 885
Frequency (MHz)
30
Return _-205
Loss (dB) _-10
-1105
-20
-025
890 895
2