PTF10160 Datasheet, PDF (3/7 Pages) Ericsson – 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

e
Broadband Test Fixture Performance
20
60
16
Gain
12
8
Efficiency (%)
50
V_DD = 26 V
40
I_DQ = 700 mA
-305
P_OUT = 85 W
-2105
Return Loss _-1205
4
-035
920 925 930 935 940 945 950 955 960
Frequency (MHz)
PTF 10160
Power Gain vs. Output Power
17
I_DQ = 700 mA
16
15 ^{IDIQDQ= =354000mmA}
14 ^{IDQ = 175 mA}
V_DD = 28 V
f = 960 MHz
13
1
10
100
1000
Output Power (Watts)
Output Power vs. Supply Voltage
100
90
80
70
60
I_DQ = 700 mA
f = 960 MHz
50
40
22
24
26
28
30
32
Supply Voltage (Volts)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
-10
V_DD = 26 V, I_DQ = 700 mA
-20 _{f1 = 960 MHz, f2 = 960.1 MHz}
3rd Order
-30
5th
-40
7th
-50
-60
0
20
40
60
80
100
Output Power (Watts-PEP)
300
250
200
150
100
50
0
0
Capacitance vs. Voltage *
25
V_GS = 0 V
20
f = 1 MHz
C_gs
15
C_ds
10
5
C_{rss 0}
10
20
30
40
Supply Voltage (Volts)
* This part is internally matched. Measurements of the
finished product will not yield these figures.
Bias Voltage vs. Temperature
1.03
1.02
Voltage normalized to 1.0 V
Series show current (A)
1.01
0.86
1.00
2.5
0.99
4.16
5.8
0.98
7.42
0.97
9.06
0.96
-20
30
80
130
Temp. (°C)
3