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PTF10160 Datasheet, PDF (1/7 Pages) Ericsson – 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor | |||
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PTF 10160
85 Watts, 860â960 MHz
GOLDMOS ® Field Effect Transistor
Description
The PTF 10160 is an internally matched 85âwatt GOLDMOS FET
intended for cellular, GSM, D-AMPS and EDGE applications. It oper-
ates with 53% efficiency and 16 dB typical gain. Full gold metalliza-
tion ensures excellent device lifetime and reliability.
⢠INTERNALLY MATCHED
⢠Performance at 960 MHz, 26 Volts
- Output Power = 85 Watts
- Power Gain = 16 dB Typ
- Efficiency = 53% Typ
⢠Full Gold Metallization
⢠Silicon Nitride Passivated
⢠Excellent Thermal Stability
⢠100% Lot Traceability
Typical Output Power& Efficiency vs. Input Power
120
70
100
80
60
40
20
0
0
60
Efficiency
50
40
VDD = 26 V
IDQ = 700 mA
30
f = 960 MHz
20
10
Output Power
0
1
2
3
4
5
Input Power (Watts)
10160 1234560055A
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain
(VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz)
Power Output at 1 dB Compression
(VDD = 26 V, IDQ = 700 mA, f = 960 MHz)
Drain Efficiency
(VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz)
Load Mismatch Tolerance
(VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz
âall phase angles at frequency of test)
All published data at TCASE = 25°C unless otherwise indicated.
Symbol Min
Gpe
15
P-1dB
85
h
50
Y
â
Typ
16
90
53
â
Max Units
â
dB
â
Watts
â
%
5:1
â
e
1
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