PTF10160 Datasheet, PDF (2/7 Pages) Ericsson – 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

PTF 10160
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 25 mA
Drain-Source Leakage Current V_DS = 26 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 3 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
18
110
17
16
15
14 ^{Gain (dB)}
Output Power (W) ₁₀₀
90
V_DD = 26.0 V
80
13
I_DQ = 700 mA
70
12
11
Efficiency (%) ₆₀
10
50
860 880 900 920 940 960
Frequency (MHz)
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ Max Units
—
—
Volts
—
1.0
mA
—
5.0
Volts
3.0
—
Siemens
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
205
1.18
–40 to +150
0.85
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
20
60
16
Gain
12
Efficiency (%) ₅₀
40
V_DD = 26 V
I_DQ = 700 mA
030
P_OUT = 85 W
-205
8
-1105
Return Loss
4
-020
860 865 870 875 880 885 890 895 900
Frequency (MHz)
2