PTF10135 Datasheet, PDF (3/6 Pages) Ericsson – 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor

e
Output Power vs. Supply Voltage
8
7
6
5
I_DQ = 70 mA
f = 2000 MHz
4
22
24
26
28
30
32
34
Supply Voltage (Volts)
PTF 10135
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
-10
-20 ^{VDD = 26 V, IDQ = 70 mA}
f₁ = 1999.9 MHz, f₂ = 2000.0 MHz _{3rd Order}
-30
-40
5th
-50
7th
-60
-70
0
1
2
3
4
5
6
Output Power (Watts-PEP)
Gain vs. Gate Voltage
20
16
V_DD = 26 V
P_IN = 0.05 W
12
8
f = 1.9
4
f = 2.0 GHz
0
2
3
4
5
6
Gate-Source Voltage (Volts)
Capacitance vs. Supply Voltage
18
1.2
15
V_GS = 0 V
f = 1 MHz
1.0
12
C_gs
0.8
9
0.6
C_ds
6
0.4
3
0.2
C_rss
0
0.0
0
10
20
30
40
Supply Voltage (Volts)
Bias Voltage vs. Temperature
1.03
1.02
Voltage normalized to 1.0 V
Series show current (A)
1.01
1
0.99
0.05
0.145
0.24
0.98
0.335
0.97
0.96
0.43
0.525
-20
30
80
130
Temp. (°C)
3