PTF10135 Datasheet, PDF (1/6 Pages) Ericsson – 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor

PTF 10135
5 Watts, 2.0 GHz
GOLDMOS^™ Field Effect Transistor
Description
The PTF 10135 is a common source N-channel enhancement-mode
lateral MOSFET intended for large signal applications from 1.0 to 2.0
GHz. It is rated at 5 watts minimum output power. Nitride surface
passivation and gold metallization ensure excellent device lifetime
and reliability. 100% lot traceability is standard.
Typical Output Power vs. Input Power
8
7
6
5
4
3
V_DD = 26 V
2
I_DQ = 70 mA
1
f = 2000 MHz
0
0
0.1
0.2
0.3
0.4
0.5
Input Power (Watts)
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
• Guaranteed Performance at 1.99 GHz, 26 V
- Output Power = 5 Watts Min
- Power Gain = 11 dB Min
• Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
10135 _A-1234569953
Package 20249
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
39
0.22
–40 to +150
4.5
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
e
1