PTF10135 Datasheet, PDF (2/6 Pages) Ericsson – 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor

PTF 10135
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 5 mA
Zero Gate Voltage Drain Current V_DS = 26 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 2 A
RF Specifications (100% Tested)
Characteristic
Gain
(V_DD = 26 V, P_OUT = 1 W, I_DQ = 70 mA, f = 1.93, 1.99 GHz)
Power Output at 1 dB Compression
(V_DD = 26 V, I_DQ = 70 mA, f = 1.99 GHz)
Drain Efficiency
(V_DD = 26 V, P_OUT = 5 W, I_DQ = 70 mA, f = 1.99 GHz)
Load Mismatch Tolerance
(V_DD = 26 V, P_OUT = 5 W, I_DQ = 70 mA, f = 1.99 GHz
—all phase angles at frequency of test)
Typical Performance
Typical P_OUT, Gain & Efficiency (at P-1dB)
vs. Frequency
16
60
15
Gain (dB)
14
50
Efficiency (%)
40
13 V_DD = 26 V
12 ^{IDQ = 70 mA}
11
30
20
Output Pow er (W) ₁₀
10
1700
1800
1900
2000
Frequency (MHz)
0
2100
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ Max Units
—
—
Volts
—
1.0
mA
—
5.0
Volts
0.8
—
Siemens
Symbol Min
G_ps
11
P-1dB
5
h_D
40
Y
—
Typ Max Units
—
—
dB
—
—
Watts
—
—
%
—
10:1
—
Broadband Test Fixture Performance
16
60
14
Gain (dB)
50
12
40
Efficiency (%)
10
V_DD = 26 V
30
I_DQ = 70 mA
8
P_OUT = 4 W
20
Return Loss (dB)
6
10
4
0
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
2