PTF10134 Datasheet, PDF (3/7 Pages) Ericsson – 100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor

e
Power Gain vs. Output Power
11
10 ^{IDQ = 1300 mA}
I_DQ = 650 mA
9
8 ^{IDQ = 325 mA}
V_DD = 28 V
f = 2170 MHz
7
0.1
1.0
10.0
100.0
Output Power (Watts)
PTF 10134
Output Power vs. Supply Voltage
65
60
55
50
I_DQ = 1.3 A Total
f = 2170 MHz
45
40
24
26
28
30
32
34
36
Supply Voltage (Volts)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
-15
V_DD = 28 V, I_DQ = 1.3 A Total
-25 _{f1 = 2169 MHz, f2 = 2170 MHz}
3rd Order
-35
5th
-45
7th
-55
-65
0
20
40
60
80 100 120
Output Power (Watts-PEP)
Capacitance vs. Supply Voltage *
450
30
400
V_GS = 0 V
25
350
f = 1 MHz
300
250
C_gs
20
15
200
150
C_ds
10
100
5
50
C_rss
0
0
0
10
20
30
40
Supply Voltage (Volts)
* This part is internally matched. Measurements of the finished
product will not yield these results.
Bias Voltage vs. Temperature
1.03
1.02
Voltage normalized to 1.0 V
Series show current (A)
1.01
1.00
0.800
0.99
2.767
0.98
4.733
0.97
6.700
0.96
8.667
0.95
-20
30
80
130
Temp. (°C)
3