PTF10134 Datasheet, PDF (2/7 Pages) Ericsson – 100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor

PTF 10134
e
Electrical Characteristics (100% Tested—characteristics, conditions and limits shown per side)
Characteristic (per side)
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 100 mA
Zero Gate Voltage Drain Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 150 mA
Forward Transconductance
V_DS = 10 V, I_D = 2 A
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ Max Units
—
—
Volts
—
5.0
mA
—
5.0
Volts
4.0
—
Siemens
Maximum Ratings
Parameter
Drain-Source Voltage ⁽¹⁾
Gate-Source Voltage ⁽¹⁾
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
(1) _{per side}
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
440
2.51
–40 to +150
0.39
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
12
120
11
Output Power (W) ¹⁰⁰
10
Gain (dB)
9
8
80
V_DD = 28 V
60
I_DQ = 1.3 A Total
40
7
2100
2120
2140
Efficiency (%)
20
2160 2180 2200
Frequency (MHz)
Broadband Test Fixture Performance
11
60
Gain
50
9
V_DD = 28 V
I_DQ = 1.3 A Total
40
7
P_OUT = 25 W
- 305
Efficiency
-1250
5
Return Loss
-2150
3
2100
2120
2140
2160
Frequency (MHz)
-305
2180
2