PTF10134 Datasheet, PDF (1/7 Pages) Ericsson – 100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor

PTF 10134
100 Watts, 2.1–2.2 GHz
GOLDMOS ^® Field Effect Transistor
Description
The PTF 10134 is an internally matched GOLDMOS FET intended
for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts
power output and operates with 10 dB typical gain. Nitride surface
passivation and gold metallization ensure excellent device lifetime
and reliability.
• INTERNALLY MATCHED
• Guaranteed Performance at 2.17 GHz, 28 V
- Output Power = 100 Watts Min
- Power Gain = 10 dB Typ
• Full Gold Metallization
• Excellent Thermal Stability
• 100% Lot Traceability
Typical Output Power & Efficiency vs. Input Power
120
48
Output Power
100
40
80
Efficiency
32
60
24
40
V_DD = 28 V
16
I_DQ = 1.3 A Total
20
f = 2170 MHz
8
0
0
0
2
4
6
8 10 12 14
Input Power (Watts)
12¹₃₄⁰₅₆1_993534A
Package 20250
RF Specifications (100% Tested)
Characteristic
Gain
(V_DD = 28 V, P_OUT = 30 W, I_DQ = 1.3 A Total, f = 2.17 GHz)
Power Output at 1.5 dB Compression
(V_DD = 28 V, I_DQ = 1.3 A Total, f = 2.17 GHz)
Drain Efficiency
(V_DD = 28 V, P_OUT = 100 W, I_DQ = 1.3 A Total, f = 2.17 GHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 80 W, I_DQ = 1.3 A Total, f = 2.17 GHz
—all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
Symbol Min
G_ps
9.5
P-1dB 100
h_D
—
Y
—
1
Typ Max Units
10
—
dB
—
—
Watts
37
—
%
—
10:1
—
e