PTF10125 Datasheet, PDF (3/6 Pages) Ericsson – 135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor

e
Power Gain vs. Output Power
14
I_DQ = 1300 mA
13
I_DQ = 650 mA
V_DD = 28 V
f = 1500 MHz
12
I_DQ = 325 mA
11
10
9
10
100
1000
Output Power (Watts)
PTF 10125
Output Power (P-1dB) vs. Supply Voltage
200
180
160
140
I_DQ = 1.3 A Total
f = 1500 MHz
120
100
24
26
28
30
32
Supply Voltage (Volts)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
-10
-20 ^{VDD = 28 V, IDQ = 1.3 A Total}
3rd Order
f₁ = 1500.0 MHz, f₂ = 1500.1 MHz
-30
5th
-40
7th
-50
-60
-70
0
50
100
150
200
Output Power (Watts-PEP)
Capacitance vs. Supply Voltage (per side) *
250
10
200
V_GS = 0 V
8
f = 1 MHz
150
6
C_gs
100
4
C_ds
50
2
0
C_rss
0
0
10
20
30
40
Supply Voltage (Volts)
* This part is internally matched. Measurements of the finished
product will not yield these results.
Peak Power Gain for DAB Applications
@ 10% Pulsed Input Signal
14
12
10 _{10% Pulse Conditions}
8 ^{f = 20 KHz}
Pulse Width = 5 us
6
4
2
V_DD = 28 V
I_DQ = 1.3 A Total
f = 1500 MHz
0
0
10
20
30
40
50
60
Average Output Power (Watts)
10 dB Peak to Average
3
Bias Voltage vs. Temperature
1.03
1.02
Voltage normalized to 1.0 V
Series show current (A)
1.01
1.00
0.6
0.99
1.74
2.88
0.98
4.02
0.97
5.16
0.96
6.3
0.95
-20
30
80
130
Temp. (°C)