PTF10125 Datasheet, PDF (2/6 Pages) Ericsson – 135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor

PTF 10125
e
Electrical Characteristics (100% Tested—characteristics, conditions and limits shown per side)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 100 mA
Zero Gate Voltage Drain Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 150 mA
Forward Transconductance
V_DS = 10 V, I_D = 6 A
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
2.0
Typ
—
—
—
4.0
Max
—
5.0
5.0
—
Units
Volts
mA
Volts
Siemens
Maximum Ratings
Parameter
Drain-Source Voltage ⁽¹⁾
Gate-Source Voltage ⁽¹⁾
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
(1)_{per side}
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
440
2.51
–40 to +150
0.39
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
17
180
Output Power (W)
16
150
V_DD = 28 V
15 _{IDQ = 1.3 A Total Gain (dB)}
120
14
90
13
Efficiency (%)
12
1400
1450
1500
1550
Frequency (MHz)
60
30
1600
Broadband Test Fixture Performance
16
50
Efficiency (%)
14
40
Gain
12
10
8
Return Loss (dB)
30
V_DD = 28 V
I_DQ = 1.3 A Total
20
-10
P_OUT = 135 W
-150
6
1450
1475
1500
1525
Frequency (MHz)
-200
1550
2