PTF10125 Datasheet, PDF (1/6 Pages) Ericsson – 135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor

PTF 10125
135 Watts, 1.4–1.6 GHz
GOLDMOS^™ Field Effect Transistor
Description
The PTF 10125 is an internally matched, common source N-channel
enhancement-mode lateral MOSFET intended for linear driver and
final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated
at 135 watts minimum power outpt. Nitride surface passivation and
full gold metallization ensure excellent device lifetime and reliability.
Typical Output Power vs. Input Power
200
180
160
140
120
100
80
V_DD = 28 V
60
40
I_DQ = 1.3 A Total
20
f = 1500 MHz
0
0
3
6
9
12
15
Input Power (Watts)
• INTERNALLY MATCHED
• Performance at 1.5 GHz, 28 V
- Output Power = 135 Watts Min
- Power Gain = 12.5 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability
A-1¹₂₃⁰₄₅1_6929535
Package 20250
RF Specifications (100% Tested)
Characteristic
Gain
(V_DD = 28 V, P_OUT = 30 W, I_DQ = 1.3 A Total,
f = 1.50, 1.55 GHz)
Power Output at 1 dB Compression
(V_DD = 28 V, I_DQ = 1.3 A Total, f = 1.50, 1.55 GHz)
Drain Efficiency
(V_DD = 28 V, P_OUT = 135 W, I_DQ = 1.3 A Total, f = 1.5 GHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 67.5 W, I_DQ = 1.3 A Total, f = 1.5 GHz
—all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
Symbol Min
G_ps
11.5
P-1dB
135
h_D
35
Y
—
Typ
12.5
150
40
—
Max Units
—
dB
—
Watts
—
%
10:1
—
e
1