PTF10120 Datasheet, PDF (3/6 Pages) Ericsson – 120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

e
Power Gain vs. Output Power
13
12
I_DQ = 1200 mA
11
10 _{IDQ = 600 mA}
9
I_DQ = 300 mA
8
V_DD = 28 V
f = 1990 MHz
7
1
10
100
1000
Output Power (Watts)
PTF 10120
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
-15
V_DD = 28 V
-25 _{IDQ = 1.2 A Total}
-35 ^{f1 = 1959 MHz}
f₂ = 1960 MHz
-45
IM3
IM5
-55
-65
0
IM7
20 40 60 80 100 120 140
Output Power (Watts-PEP)
Output Power vs. Supply Voltage
180
160
140
120
100
80
22
I_DQ = 1.2 A Total
f = 1990 MHz
24
26
28
30
32
34
Supply Voltage (Volts)
Capacitance vs. Supply Voltage (per side) *
240
30
200
V_GS =0 V
25
160
f = 1 MHz
20
C_gs
120
15
C_ds
80
10
40
0
0
10
20
30
Supply Voltage (Volts)
C_rss ⁵
0
40
Impedance Data
(V_DD = 28 V, P_OUT = 120 W,
I_DQ = 1.2 A Total)
Frequency
GHz
1.75
1.80
1.85
1.90
1.95
2.00
2.05
Z Source W
R
jX
7.6
-10.5
8.8
-13.0
9.8
-14.1
11.0
-15.2
12.0
-17.0
13.4
-17.5
14.6
-18.0
Z Source
G
G
* This part is internally matched. Measurements of the finished
product will not yield these results.
Z Load
D
Z₀ = 50 W
S
D
Z Load W
R
jX
4.6
-3.6
4.2
-3.2
4.0
-2.8
3.7
-2.8
3.6
-3.2
3.4
-3.8
3.2
-4.4
3