PTF10120 Datasheet, PDF (2/6 Pages) Ericsson – 120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

PTF 10120
e
Electrical Characteristics (100% Tested—characteristics, conditions and limits shown per side)
Characteristic (per side) Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 100 mA
Zero Gate Voltage Drain Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 150 mA
Forward Transconductance
V_DS = 10 V, I_D = 2 A
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ
—
—
—
4.0
Max
—
5.0
5.0
—
Units
Volts
mA
Volts
Siemens
Maximum Ratings
Parameter
Drain-Source Voltage⁽¹⁾
Gate-Source Voltage⁽¹⁾
Operating Junction Temperature
Total Device Dissipation at
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
(1) _{per side}
Typical Performance
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
440
2.51
–40 to +150
0.39
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
12
160
Output Power (W)
140
11
120
10
Gain (dB)
9
8
7
1750
1850
100
V_DD = 28 V
80
I_DQ = 1.2 A Total
60
40
Efficiency (%)
20
1950
2050
Frequency (MHz)
Broadband Test Fixture Performance
12
60
Efficiency (%)
11
@P-1dB
45
10 _{Gain (dB)}
9
8
1930 1940
V_DD = 28 V
30
I_DQ = 1.2 A Total ₀
P_OUT = 120 W - 15
Return Loss (dB)
-10
-15
-200
1950 1960 1970 1980 1990
Frequency (MHz)
2