PTF10120 Datasheet, PDF (1/6 Pages) Ericsson – 120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

PTF 10120
120 Watts, 1.8–2.0 GHz
GOLDMOS^™ Field Effect Transistor
Description
The PTF 10120 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for CDMA and TDMA
applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output.
Nitride surface passivation and full gold metallization ensure excellent
device lifetime and reliability.
Typical Output Power vs. Input Power
150
100
120
90
60
30
0
0
80
Output Power
60
Efficiency
40
V_DD = 28 V
I_DQ = 1.2 A Total ²⁰
f = 1990 MHz
0
3
6
9
12 15 18
Input Power (Watts)
• INTERNALLY MATCHED
• Guaranteed Performance at 1.99 GHz, 28 V
- Output Power = 120 Watts Min
- Power Gain = 11 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability
10120 _A-1234569849
Package 20250
RF Specifications (100% Tested)
Characteristic
Gain
(V_DD = 28 V, P_OUT = 30 W, I_DQ = 1.2 A Total, f = 1.99 GHz)
Power Output at 1 dB Compression
(V_DD = 28 V, I_DQ = 1.2 A Total, f = 1.99 GHz)
Drain Efficiency
(V_DD = 28 V, P_OUT = 120 W, I_DQ = 1.2 A Total, f = 1.99 GHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 60 W, I_DQ = 1.2 A Total, f = 1.99 GHz
—all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
Symbol
G_ps
P-1dB
h_D
Y
Min
10
120
—
—
Typ
11
—
40
—
Max Units
—
dB
—
Watts
—
%
10:1
—
e
1