PTF10036 Datasheet, PDF (3/6 Pages) Ericsson – 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

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Typical P_OUT, Gain & Efficiency (at P-1dB)
vs. Frequency
25
120
Output Pow er (W)
20
100
15
80
10
G ain (d B )
60
5
0
860
V_DD = 28 V
I_DQ = 800 mA Total
Efficiency (%) ₄₀
20
880 900 920 940 960
Frequency (MHz)
PTF 10036
Intermodulation Distortion vs. Power Output
-10
V_DD = 28 V
-20 I_DQ = 800 mA Total
3rd
f₁ = 880.0 MHz
-30 _{f2 = 880.1 MHz}
5th
-40
7th
-50
-60
10 20 30 40 50 60 70 80 90 100
Output Power (Watts-PEP)
Output Power vs. Supply Voltage
100
90
80
70
60
50
20
I_DQ = 800 mA Total
f = 960 MHz
P_IN = 4.5 W
22 24 26 28 30 32 34
Supply Voltage (Volts)
Power Gain vs. Output Power
16
15
I_DQ = 800 mA
14
13 _{IDQ = 400 mA}
12
11
I_DQ = 200 mA
10
V_DD = 28 V
f = 960 MHz
1.0
10.0
100.0
Output Power (Watts)
Capacitance vs. Supply Voltage (one side) *
160
140
120 C_gs
100
V_GS = 0 V
f = 1 MHz
80
60
C_ds
40
20
0
0
C_rss
10
20
30
Supply Voltage (Volts)
20
18
16
14
12
10
8
6
4
2
0
40
* This part is internally matched. Measurements of the
finished product will not yield these results.
Bias Voltage vs. Temperature
1.03
Voltage normalized to 1.0 V
1.02
Series show current (A)
1.01
1.00
0.43
0.99
1.25
0.98
2.08
0.97
2.9
3.71
0.96
4.53
0.95
-20
30
80
130
Temp. (°C)
3