PTF10036 Datasheet, PDF (2/6 Pages) Ericsson – 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

PTF 10036
e
Electrical Characteristics (100% Tested—characteristics, conditions and limits shown per side)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 5 mA
Drain-Source Leakage Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 3 A
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ
—
—
—
2.8
Max
—
1.0
5.0
—
Units
Volts
mA
Volts
Siemens
Maximum Ratings
Parameter
Drain-Source Voltage⁽¹⁾
Gate-Source Voltage⁽¹⁾
Operating Junction Temperature
Total Device Dissipation at
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
(1) _{per side}
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
250
1.43
–40 to +150
0.7
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Typical Performance
Broadband Test Fixture Performance
18
60
15
Efficiency (%) ₅₀
12
Gain (dB)
9
V_DD = 28 V
I_DQ = 800 mA Total
40
-30
6
P_OUT = 85 W
-2100
3
10
Return Loss (dB) -15
0
0
860 865 870 875 880 885 890 895 900-20
Frequency (MHz)
Broadband Test Fixture Performance
16
Efficiency (%) ⁶⁰
14
50
12
Gain (dB) ^VDD ^{= 28 V}
40
10
I_DQ = 800 mA Total
- ₃₀₅
8
P_OUT = 8^‘ 5 W
-2105
6
Return Loss (dB) _-1205
4
0
925
935
945
955
-35
Frequency (MHz)
2