PTF10036 Datasheet, PDF (1/6 Pages) Ericsson – 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

PTF 10036
85 Watts, 860–960 MHz
GOLDMOS^™ Field Effect Transistor
Description
The PTF 10036 is an internally matched, 85 Watt LDMOS FET
intended for large signal amplifier applications from 860 to 960 MHz.
Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.
• INTERNALLY MATCHED
• Performance at 960 MHz, 28 Volts
- Output Power = 85 Watts
- Power Gain = 12.5 dB Typ
- Efficiency = 55% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• 100% Lot Traceability
Typical Output Power vs. Input Power
100
60
Efficiency (%)
80
50
Output Pow er
60
40
40
V_DD = 28 V
30
I_DQ = 800 mA Total
20
f = 960 MHz
20
0
10
0 12 3 45 6
Input Power (Watts)
RF Specifications (100% Tested)
Characteristic
Gain
(V_DD = 28 V, P_OUT = 85 W, I_DQ = 800 mA Total, f = 900 MHz)
Power Output at 1 dB Compression
(V_DD = 28 V, I_DQ = 800 mA Total, f = 900 MHz)
Drain Efficiency
(V_DD = 28 V, P_OUT = 85 W, I_DQ = 800 mA Total, f = 900 MHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 85 W(PEP), I_DQ = 800 mA Total,
f = 867, 867.1 MHz—all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
Symbol Min
G_ps
11.0
P-1dB
85
h
50
Y
—
1
10036 _A-1234569744
Package 20240
Typ Max Units
12.5
—
dB
90
—
Watts
55
—
%
—
3:1
—
e