PTF10020 Datasheet, PDF (3/6 Pages) Ericsson – 125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

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Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
15
150
Output Power (W )
14
130
13
Gain (dB)
12
11
110
V_DD = 28 V
90
I_DQ = 1.4 A Total
70
Efficiency (%)
10
860
880
900
920
940
Frequency (MHz)
50
960
PTF 10020
Efficiency vs. Output Power
80
70
60
50
40
30
V_DD = 28 V
20
I_DQ = 1.4 A Total
10
f = 960 MHz
0
30
50
70
90
110
130
Output Power (Watts)
Output Power vs. Supply Voltage
150
130
110
90
I_DQ = 1.4 A Total
f = 960 MHz
70
Pin = 5.4 W
50
20 22 24 26 28 30 32 34
V_DS, Supply Voltage
Intermodulation Distortion vs. Output Power
-10
V_DD = 28 V
-20 _{IDQ = 1.4 A Total}
f₁ = 941.9 MHz
-30
f₂ = 942.0 MHz
3rd order
-40
5th
-50
7th
-60
20 30 40 50 60 70 80 90 100 110 120
Output Power (Watts-PEP)
Power Gain vs. Output Power
15
I_DQ = 1.4 A
14
V_DD = 28 V
f = 960 MHz
13 ^{IDQ = 700 mA}
12 ^{IDQ = 350 mA}
11
1
10
100
Output Power (W)
1000
Capacitance vs. Voltage (one side)*
180
27
160
140
120 ^Cgs
V_GS = 0 V ²⁴
f = 1 MHz 21
18
100
15
80
12
60
C_ds
9
40
6
20
C_rss
3
0
0
0
10
20
30
40
Supply Voltage (Volts)
*This part is internally matched. Measurements of the finished
product will not yield these figures.
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