PTF10020 Datasheet, PDF (2/6 Pages) Ericsson – 125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

PTF 10020
e
Electrical Characteristics (100% Tested—characteristics, conditions and limits shown per side)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 5 mA
Drain-Source Leakage Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 3 A
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ
—
—
4.3
2.5
Max
—
1.0
5.0
—
Units
Volts
mA
Volts
Siemens
Maximum Ratings
Parameter
Drain-Source Voltage ⁽¹⁾
Gate-Source Voltage ⁽¹⁾
Operating Junction Temperature
Total Device Dissipation at
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
(1)_{per side}
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
290
1.67
–40 to +150
0.6
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Typical Performance
Broadband Test Fixture Performance
20
60
16
Gain
Efficiency %
50
40
12
8
4
860
V_DD = 28 V
- 350
I_DQ = 1.4 A Total
-1250
P_OUT = 125 W
-2150
Return Loss
-305
870
880
890
900
Frequency (MHz)
Broadband Test Fixture Performance
20
60
18
16
14
Gain
12
10
8
6
4
925 930
Efficiency % ₅₀
40
V_DD = 28 V
- 350
I_DQ = 1.4 A Total
-1250
P_OUT = 125 W
Return Loss
-2150
-305
935 940 945 950 955 960
Frequency (MHz)
2