PTF10020 Datasheet, PDF (1/6 Pages) Ericsson – 125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

PTF 10020
125 Watts, 860–960 MHz
GOLDMOS^™ Field Effect Transistor
Description
The PTF 10020 is an internally matched, 125 Watt LDMOS FET
intended for large signal amplifier applications from 860 to 960 MHz.
Nitride surface passivation and gold metallization ensure excellent
device lifetime and reliability.
Typical Output Power vs. Input Power
150
960 MHz
125
100
900 MHz
75
860 MHz
50
V_DD = 28 V
25
I_DQ = 1.4 A Total
0
0
1
2
3
4
5
6
7
Input Power (Watts)
• INTERNALLY MATCHED
• Performance at 960 MHz, 28 Volts
- Output Power = 125 Watts
- Power Gain = 12.5 dB Typ
- Efficiency = 55% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• 100% Lot Traceability
10020 _A-1234569813
Package 20240
RF Specifications (100% Tested)
Characteristic
Gain
(V_DD = 28 V, P_OUT = 125 W, I_DQ = 1.4 A Total, f = 960 MHz)
Power Output at 1 dB Compression
(V_DD = 28 V, I_CQ = 1.4 A Total, f = 960 MHz)
Drain Efficiency
(V_DD = 28 V, P_OUT = 125 W, I_DQ = 1.4 A Total, f = 960 MHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 125 W(PEP), I_DQ = 1.4 A Total,
f = 959.9, 960 MHz—all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
Symbol Min
G_ps
11.0
P-1dB
125
h
50
Y
—
Typ
12.5
130
55
—
Max Units
—
dB
—
Watts
—
%
10:1
—
e
1