EN25B10 Datasheet, PDF (9/31 Pages) Eon Silicon Solution Inc. – 1 Mbit Serial Flash Memory with Boot and Parameter Sectors

EN25B10
Table 5. Manufacturer and Device Identification
Boot Type
OP Code
(M7-M0)
ABh
EN25B10(Bottom Boot)
90h
1Ch
9Fh
1Ch
ABh
EN25B10T(Top Boot)
90h
1Ch
9Fh
1Ch
(ID15-ID0) (ID7-ID0)
30h
30h
2011h
40h
40h
2011h
Write Enable (WREN) (06h)
The Write Enable (WREN) instruction (Figure 5) sets the Write Enable Latch (WEL) bit. The Write Enable
Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Bulk Erase (BE) and
Write Status Register (WRSR) instruction.
The Write Enable (WREN) instruction is entered by driving Chip Select (CS#) Low, sending the instruction
code, and then driving Chip Select (CS#) High.
Write Disable (WRDI) (04h)
The Write Disable instruction (Figure 6) resets the Write Enable Latch (WEL) bit in the Status Register to
a 0. The Write Disable instruction is entered by driving Chip Select (CS#) low, shifting the instruction code
“04h” into the DI pin and then driving Chip Select (CS#) high. Note that the WEL bit is automatically reset
after Power-up and upon completion of the Write Status Register, Page Program, Sector Erase, and Bulk
Erase instructions.
This Data Sheet may be revised by subsequent versions
9
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2006/12/26