EN25B10 Datasheet, PDF (31/31 Pages) Eon Silicon Solution Inc. – 1 Mbit Serial Flash Memory with Boot and Parameter Sectors

Revisions List
EN25B10
Revision No Description
Date
A
Initial release
2006/04/27
B
1. _{Change clock rate from 50MHz to 75MHz,}
2006/12/26
Page program time 1.4 ms typical to 1.5 ms typical
Sector erase time 100 to 500 ms typical to 300 to 500 ms
in page 1
2. Change Table 8 DC Characteristics in page 22
(1) Add ICC3 for 75MHz
3. Change Table 10 to 75MHz AC Characteristics in page 23
(1) Change F_R from 50 to 75MHz
(2) Change f_R from 33 to 50MHz
(3) Change t_CLH from 9ns to 6ns
(4) Change t_CLL from 9ns to 6ns
(5) Change t_SHQZ from 9ns to 6ns
(6) Change t_HLQZ from 9ns to 6ns
(7) Change t_HHQZ from 9ns to 6ns
(8) Change t_CLQV from 9ns to 6ns
(9) Change Page program time 1.4ms typical to 1.5ms
(10) Change 16KB Sector erase time 0.2 / 0.4 seconds to
0.5 / 1 seconds for typical and maximum
(11) Change 4KB Sector erase time 0.15 / 0.3 seconds to
0.3 / 0.6 seconds for typical and maximum
4. Add Table 11: 50MHz AC Characteristics in page 24
(1) Change Page program time 1.4ms typical to 1.5ms
(2) Change 16KB Sector erase time 0.2 / 0.4 seconds to
0.5 / 1 seconds for typical and maximum
(3) Change 4KB Sector erase time 0.15 / 0.3 seconds to
0.3 / 0.6 seconds for typical and maximum
5. Add 75MHz option in Ordering Information in page 30
This Data Sheet may be revised by subsequent versions ₃₁ ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2006/12/26