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EN25B10 Datasheet, PDF (4/31 Pages) Eon Silicon Solution Inc. – 1 Mbit Serial Flash Memory with Boot and Parameter Sectors | |||
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EN25B10
MEMORY ORGANIZATION
The memory is organized as:
z 131,072 bytes
z Flexible Sector Architecture
Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,three 32-Kbyte sectors
z Bottom or top boot configurations
z 512 pages (256 bytes each)
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector or
Bulk Erasable but not Page Erasable.
Table 2a. Bottom Boot Block Sector Architecture
Sector
6
5
4
3
2
1
0
SECTOR SIZE (KByte)
32
32
32
16
8
4
4
Address range
18000h â 1FFFFh
10000h â 17FFFh
08000h â 0FFFFh
04000h â 07FFFh
02000h â 03FFFh
01000h â 01FFFh
00000h â 00FFFh
Table 2b. Top Boot Block Sector Architecture (Special order)
Sector
6
5
4
3
2
1
0
SECTOR SIZE (KByte)
4
4
8
16
32
32
32
Address range
1F000h â 1FFFFh
1E000h â 1EFFFh
1C000h â 1DFFFh
18000h â 1BFFFh
10000h â 17FFFh
08000h â 0FFFFh
00000h â 07FFFh
This Data Sheet may be revised by subsequent versions
4
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2006/12/26
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