EN25Q80B Datasheet, PDF (64/64 Pages) Eon Silicon Solution Inc. – 8 Megabit Serial Flash Memory with 4Kbyte Uniform Sector

Revisions List
EN25Q80B
Revision No Description
Date
Preliminary 0.0
Preliminary 0.1
Preliminary 0.2
Initial Release
1. Update low voltage from 2.35V to 2.3V.
2. Update OTP security sector form 256 byte to 512 byte
3. For 2.3~ 3.6 volt, update speed from 85MHz to 66MHz.
4. Update typical active current form 12mA to 10mA on page 1.
5. Rename Enable Quad I/O (EQIO) to Enable Quad Peripheral
Interface mode (EQPI).
6. Rename 32KB block erase to 32KB half block erase.
7. Add Full Quad SPI Modes (QPI) description on page 8.
8. Add a note for Table 3 on page 10.
9. Update Table 4B. Instruction Set (Read Instruction) on page 13.
10. Add Table 4C. Instruction Set (Read Instruction support mode and
dummy cycle setting) on page 13.
11. Add Figure 7.2 Software Reset Recovery on page 15.
12. Update Enter OTP Mode (3Ah) description and Update OTP security
sector form 256 byte to 512 byte on page 42.
13. Update Table 11. Power-Up Timing and Write Inhibit Threshold on page
50.
14. Update Table 12. 104MHz DC Characteristics on page 51.
15. Add Table 13. 66MHz DC Characteristics on page 52.
16. Update Table 14. AC Measurement Conditions on page 52.
17. Update Table 15. 104 MHz AC Characteristics on page 53.
18. Add Table 16. 66MHz AC Characteristics on page 54.
19. Update Table 17. DATA RETENTION and ENDURANCE on page 57.
20. Add 8-pin 150mil VSOP package option.
1. Add 8-pin USON (2x3 mm) package option.
2012/04/19
2012/11/13
2013/01/31
Preliminary 0.3
A
B
Update WPDIS bit description on page 9 and 20.
2013/03/29
1. Update Table 12. 104MHz DC Characteristics on page on page 51.
(1) Correct the typo ILI and ILO _=> ± 2µA (max.)
(2) Update ICC5 (WRSR) from 10 / 18 to 5 / 12 mA (typ. / max).
(3) Update ICC6 (SE) from 10 to 5 mA (typ.).
2. Remove 66MHz DC Characteristics.
2013/08/22
3. Update Table 14. 104 MHz AC Characteristics on page 52.
(1) Update Page Programming Time (tPP) from 0.8 to 0.6 ms (typ.).
(2) Update Sector Erase Time (tSE) from 0.2 to 0.3 s (max.)
4. Remove 66MHz AC Characteristics.
1. Remove Vcc = 2.3~3.6 related description.
2. Update Table 12. DC Characteristics on page on page 51.
(1) Update ICC3 (READ / in SPI mode) from 10 to 8 mA (typ.)
2013/10/16
3. Update Table 14. AC Characteristics on page 52.
(1) Update 32K Half Block Erase Time (tHBE) from 0.5 to 0.8s (max.)
This Data Sheet may be revised by subsequent versions
64
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc.,
Rev. B, Issue Date: 2013/10/16
www.eonssi.com