EN25S80A Datasheet, PDF (54/66 Pages) Eon Silicon Solution Inc. – 8 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector

EN25S80A
Power-up Timing
All functionalities and DC specifications are specified for a VCC ramp rate of greater than 1V per 100 ms
(0V to 1.65V in less than 270 ms). See Table 15 and Figure 35 for more information.
Figure 35. Power-up Timing
Table 15. Power-Up Timing
Symbol
(1)
T_PU-READ
(1)
T_PU-WRITE
Parameter
V_CC Min to Read Operation
V_CC Min to Write Operation
Min.
Unit
100
µs
100
µs
Note:
1. This parameter is measured only for initial qualification and after a design or process change that
could affect this parameter.
.
INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh).
The Status Register contains 00h (all Status Register bits are 0).
This Data Sheet may be revised by subsequent versions
54
or modifications due to changes in technical specifications.
©2014 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2014/01/20
www.eonssi.com