EN25F05 Datasheet, PDF(5/31 Page) Eon Silicon Solution Inc. – 512 Kbit Serial Flash Memory with 4Kbytes Uniform Sector

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EN25F05 Datasheet, PDF (5/31 Pages) Eon Silicon Solution Inc. – 512 Kbit Serial Flash Memory with 4Kbytes Uniform Sector

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Figure 3. SPI Modes

EN25F05

Page Programming

To program one data byte, two instructions are required: Write Enable (WREN), which is one byte,

and a Page Program (PP) sequence, which consists of four bytes plus data. This is followed by the

internal Program cycle (of duration tPP).

To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be pro-

grammed at a time (changing bits from 1 to 0), provided that they lie in consecutive addresses on

the same page of memory.

Sector Erase, Block Erase and Chip Erase

The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be applied,

the bytes of memory need to have been erased to all 1s (FFh). This can be achieved a sector at a

time, using the Sector Erase (SE) instruction, a block at a time using the Block Erase (BE)

instruction or throughout the entire memory, using the Chip Erase (CE) instruction. This starts an

internal Erase cycle (of duration tSE tBE or tCE). The Erase instruction must be preceded by a Write

Enable (WREN) instruction.

Polling During a Write, Program or Erase Cycle

A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase (SE, BE

or CE ) can be achieved by not waiting for the worst case delay (tW, tPP, tSE, tBE or tCE). The

Write In Progress (WIP) bit is provided in the Status Register so that the application program can

monitor its value, polling it to establish when the previous Write cycle, Program cycle or Erase cycle

is complete.

Active Power, Stand-by Power and Deep Power-Down Modes

When Chip Select (CS#) is Low, the device is enabled, and in the Active Power mode. When Chip

Select (CS#) is High, the device is disabled, but could remain in the Active Power mode until all

internal cycles have completed (Program, Erase, Write Status Register). The device then goes into

the Stand-by Power mode. The device consumption drops to ICC1.

The Deep Power-down mode is entered when the specific instruction (the Enter Deep Power-down

Mode (DP) instruction) is executed. The device consumption drops further to ICC2. The device re-

mains in this mode until another specific instruction (the Release from Deep Power-down Mode and

Read Device ID (RDI) instruction) is executed.

All other instructions are ignored while the device is in the Deep Power-down mode. This can be

used as an extra software protection mechanism, when the device is not in active use, to protect the

device from inadvertent Write, Program or Erase instructions.

Status Register. The Status Register contains a number of status and control bits that can be read

or set (as appropriate) by specific instructions.

WIP bit. The Write In Progress (WIP) bit indicates whether the memory is busy with a Write Status

WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. B, Issue Date: 2008/06/23

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