EN29GL128H Datasheet, PDF (44/54 Pages) Eon Silicon Solution Inc. – 128 Megabit (16384K x 8-bit / 8192K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only

AC CHARACTERISTICS
EN29GL128H/L
Figure 16. AC Waveforms for Chip/Sector Erase Operations Timings
Addresses
CE#
OE#
WE#
Data
RY/BY#
Erase Command Sequence (last 2 cycles)
t_WC
t_AS
t_AH
0x2AA
SA
0x555 for chip
erase
t_GHW
t_CH
t_WP
t_CS
t_WP
0x55
t_{DS tDH}
0x30
tBUS
Read Status Data (last two cycles)
VA
VA
tWHWH2 or tWHWH3
Status
D_OUT
t_RB
VCC
t_VCS
Notes:
1. SA=Sector Address (for sector erase), VA=Valid Address for reading status, D_out=true data at read address.
2. V_cc shown only to illustrate t_vcs measurement references. It cannot occur as shown during a valid command
sequence.
This Data Sheet may be revised by subsequent versions
44
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. H, Issue Date: 2009/10/01
www.eonssi.com