EN29GL128HL Datasheet, PDF (43/54 Pages) Eon Silicon Solution Inc. – 128 Megabit (16384K x 8-bit / 8192K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only

AC CHARACTERISTICS
EN29GL128H/L
Table 21. Write (Erase/Program) Operations
Alternate CE# Controlled Writes
Parameter
Symbols
JEDEC Standard
Description
Speed
Unit
-70
t_AVAV
t_WC
Write Cycle Time
Min
70
ns
t_AVEL
t_AS
Address Setup Time
Min
0
ns
t_ELAX
t_AH
Address Hold Time
Min
45
ns
t_DVEH
t_DS
Data Setup Time
Min
30
ns
t_EHDX
t_DH
Data Hold Time
Min
0
ns
t_GHEL
t_GHEL
Read Recovery Time before
Write (OE# High to CE# Low)
Min
0
ns
t_WLEL
t_WS
WE# SetupTime
Min
0
ns
t_EHWH
t_WH
WE# Hold Time
Min
0
ns
t_ELEH
t_CP
Write Pulse Width
Min
35
ns
t_EHEL
t_CPH
Write Pulse Width High
Min
20
ns
Write Buffer Program Operation
(Note 2, 3)
Typ
160
µs
t_WHWH1 t_{WHWH1 Programming Operation}
Typ
8
µs
(Word and Byte mode)
Max
200
µs
Typ
0.1
s
t_WHWH2 t_WHWH2 Sector Erase Operation
Max
2
s
Notes: 1. Not 100% tested.
2. See table.22 Erase and Programming Performance for more information.
3. For 1~32 words bytes programmed.
This Data Sheet may be revised by subsequent versions
43
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. L, Issue Date: 2012/06/05
www.eonssi.com