EN29GL128HL Datasheet, PDF (32/54 Pages) Eon Silicon Solution Inc. – 128 Megabit (16384K x 8-bit / 8192K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only

Table 9. CFI Query Identification String
EN29GL128H/L
Addresses
(Word Mode)
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
Data
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
Description
Query Unique ASCII string “QRY”
Primary OEM Command Set
Address for Primary Extended Table
Alternate OEM Command set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
Table 10. System Interface String
Addresses
(Word Mode) Data
Description
1Bh
0027h
Vcc Min (write/erase)
DQ7-DQ4: volt, DQ3-DQ0: 100mV
1Ch
0036h
Vcc Max (write/erase)
DQ7-DQ4: volt, DQ3-DQ0: 100mV
1Dh
0000h Vpp Min voltage (00h = no Vpp pin present)
1Eh
0000h Vpp Max voltage (00h = no Vpp pin present)
1Fh
0003h Typical timeout per single byte/word write 2^N µs
20h
0004h Typical timeout for min size buffer write 2^N µs (00h = not supported)
21h
0009h Typical timeout per individual block erase 2^N ms
22h
0000h Typical timeout for full chip erase 2^N ms (00h = not supported)
23h
0005h Max timeout for byte/word write 2^N times typical
24h
0005h Max timeout for buffer write 2^N times typical
25h
0004h Max timeout per individual block erase 2^N times typical
26h
0000h Max timeout for full chip erase 2^N times typical (00h = not supported)
Table 11. Device Geometry Definition
Addresses
(Word mode)
27h
Data
Description
0018h Device Size = 2^N bytes. 2**24=16MB=128Mb
28h
0002h Flash Device Interface Description (refer to CFI publication 100);
29h
0000h 01h = X16 only; 02h = x8/x16
2Ah
0006h Max number of byte in multi-byte write = 2^N
2Bh
0000h (00h = not supported)
2Ch
0001h Number of Erase Block Regions within device
2Dh
007Fh Erase Block Region 1 Information
2Eh
0000h (refer to the CFI specification of CFI publication 100)
2Fh
0000h 128 uniform sectors (7Fh + 1)
30h
0002h
31h
0000h
32h
0000h Erase Block Region 3 Information
33h
0000h (refer to the CFI specification of CFI publication 100)
34h
0000h
35h
0000h
36h
0000h Erase Block Region 3 Information
37h
0000h (refer to the CFI specification of CFI publication 100)
38h
0000h
This Data Sheet may be revised by subsequent versions
32
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. L, Issue Date: 2012/06/05
www.eonssi.com