EN25Q16 Datasheet, PDF (40/40 Pages) Eon Silicon Solution Inc. – 16 Megabit Serial Flash Memory with 4Kbyte Uniform Sector

Revisions List
EN25Q16
Revision No Description
Date
A
Initial Release
2009/01/05
B
Remove the HOLD# function from version A.
2009/02/04
C
Modify t_CSH CS# High Time from 100ns to 15ns for read and 50ns for
program/erase in Table 11
2009/3/31
1. Update Page program, Sector, Block and Chip erase time (typ.)
parameter on page 1 and 30.
(1). Page program: from 1.5ms to 1.3m
D
(2). Sector erase: from 0.15s to 0.09s
(3). Block erase: from 0.8s to 0.4s
2009/4/27
(4). Chip erase: from 18s to 12s
2. Add the description of OTP erase command on page 10 and page 27.
3. Modify RDSR, RDID from 50 to 80MHz in Table 11 on page 30
E
Modify Table 9. DC Characteristics I_CC1 (Standby) and I_CC2 (Deep
2009/10/21
Power-down) Current from 5µA to 20µA on page 29.
This Data Sheet may be revised by subsequent versions
40
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. E, Issue Date: 2009/10/21
www.eonssi.com