EN25F32 Datasheet, PDF (40/40 Pages) Eon Silicon Solution Inc. – 32 Megabit Serial Flash Memory with 4Kbytes Uniform Sector

Revisions List
EN25F32
Revision No Description
Date
A
Preliminary draft
2008/08/06
B
Correct the typo from Sector to Block in Table 3 on page 10.
2008/08/25
1. Add Eon products’ New top marking “cFeon“ information on page 1.
2. Add the description “Serial Interface Architecture “and modify active
current (typical) from 5mA to 12mA on page 2.
3. List the Note 4 for 90h command in Table 4 on page 14.
4. Update Table 6. Status Register Bit Locations on page 16.
5. Add Table 7. OTP Sector Address on page 27.
6. Add Note “ Vcc (max) is 3.6V and Vcc (min) is 2.7V “ in Table 8 on
page 28.
C
7. Modify ICC3 from "Q = open" to " DQ = open " in Table 9 on page 29 _2008/11/07
8. Modify fR from 66MHz to 50 MHz and correct the typo
“tCLH to tCH” 、 “tCLL to tCL”、”tHHQZ to tHHQX” in Table 11 on
page 30
9. Modify Storage Temperature from "-65 to + 125" to
"-65 to +150" on page 32
10. Delete Table 12. Latch up Characteristics from version B.
11. Modify official name from 209mil to 208mil and delete dimension " c
" in Figure 26 on page 34.
D
Modify the Table 7. OTP Sector Address range from
“3FF000h – 3FFFFFh” to “3FF000h – 3FF1FFh” on page 27
2008/11/18
E
Remove the Protected Area Sizes definition of BP2、BP1 and BP0 =
001 to 110 in table 3 on page 12.
2008/12/04
1. Update Page program, Sector, Block and Chip erase time (typ.)
parameter on page 2 and 31.
(1). Page program: from 1.5ms to 1.3m
(2). Sector erase: from 0.15s to 0.09s
(3). Block erase: from 0.8s to 0.5s
2. Update the Protected Area Sizes definition of BP3, BP2、BP1 and
BP0 in table 3 on page 12.
3. Add the description of OTP erase command on page 14 and page
F
28.
2009/05/13
4. Remove the Block Erase “52h” command on page 14 and 23.
5. Add S5 (BP3 bit) in Table 6. Status Register Bit Locations on page
17.
6. Modify Icc4, Icc5, Icc6 and Icc7 on page 30.
(1) Icc4: from 15mA to 28mA
(2) Icc5: from 15mA to 18mA
(3) Icc6: from 15mA to 25mA
(4) Icc7: from 15mA to 25mA
G
Modify Table 9. DC Characteristics I_CC1 (Standby) and I_CC2 (Deep
2009/10/16
Power-down) Current from 5µA to 20µA on page 30.
This Data Sheet may be revised by subsequent versions
40 ^{©2004 Eon Silicon Solution, Inc.,}
or modifications due to changes in technical specifications.
Rev. G, Issue Date: 2009/10/16
www.eonssi.com