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EN25S80 Datasheet, PDF (37/37 Pages) Eon Silicon Solution Inc. – 8 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector
Revisions List
EN25S80
Revision No Description
A
Preliminary version
1. Modify device ID in Table 5 on Page 11
B
2. Modify tCLQV in Table 11 on Page28
3. Add cFeon new top marking notice on Page 35
1. Remove Quad mode spec.
2. Correction word OTP 512 to 256 byte on page 24
3. Update page program, Sector erase, Block erase time and
Chip erase time on page1 and 27
4. Modify fR from 50 to 33MHz
C
5. Correction word tCH and tCL on page 27
6. Modify tW from Typ 10ms and Max 15ms to Typ 20ms and
Max to 50ms
7. Add package 8 pins SOP 150mil body width
8. Modify VOL test condition and Max value to 0.3V in table 9
1. Update Block erase: from 0.4s to 0.5s on page 1 and 28.
2. Add the description of OTP erase command on page 10 and page
D
25.
3. Recover the Dual Input / Output FAST_READ (BBh) spec. on page
18
4. Correction typo for mapping to sector from 1023 to 255 on page 25.
Date
2008/10/03
2008/12/31
2009/02/18
2009/05/15
This Data Sheet may be revised by subsequent versions
37
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. D, Issue Date: 2009/05/15
www.eonssi.com