EN25S80 Datasheet, PDF (31/37 Pages) Eon Silicon Solution Inc. – 8 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector

Table 12. DATA RETENTION and ENDURANCE
Parameter Description
Data Retention Time
Erase/Program Endurance
Test Conditions
150°C
125°C
-40 to 85 °C
Min
10
20
100k
EN25S80
Unit
Years
Years
cycles
Table 13. CAPACITANCE
( VCC = 1.65-1.95V)
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
C_IN
Input Capacitance
V_IN = 0
6
Unit
pF
C_OUT
Output Capacitance
V_OUT = 0
8
pF
Note : Sampled only, not 100% tested, at TA = 25°C and a frequency of 20MHz.
This Data Sheet may be revised by subsequent versions
31
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. D, Issue Date: 2009/05/15
www.eonssi.com